SMA730F Multi-band GSM/EDGE/UMTS/LTE Phone with Bluetooth, WLAN, RFID and ANT+ Test Report HAC RFE Samsung Electronics Co Ltd

Samsung Electronics Co Ltd Multi-band GSM/EDGE/UMTS/LTE Phone with Bluetooth, WLAN, RFID and ANT+

FCC ID Filing: A3LSMA730F
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PCTEST ENGINEERING LABORATORY, INC.
7185 Oakland Mills Road, Columbia, MD 21046 USA
Tel. 410.290.6652 / Fax 410.290.6654
http://www.pctest.com
HEARING AID COMPATIBILITY
Applicant Name:
Samsung Electronics Co., Ltd.
129, Samsung-ro, Maetan dong,
Yeongtong-gu, Suwon-si
Gyeonggi-do 16677, Korea
Date of Testing:
10/02/2017 - 10/09/2017
Test Site/Location:
PCTEST Lab, Columbia, MD, USA
Test Report Serial No.:
1M1710050266-11-R1.A3L
FCC I D:
A3LSMA730F
APPLI C A NT:
SAMSUNG ELECTRONICS CO., LTD.
Scope of Test:
Application Type:
FCC Rule Part(s):
HAC Standard:
DUT Type:
Model:
Additional Model(s):
Test Device Serial No.:
RF Emissions Testing
Certification
CFR §20.19(b)
ANSI C63.19-2011
285076 D01 HAC Guidance v05
Portable Handset
SM-A730F/DS
SM-A730F
Pre-Production Sample [S/N: 29495]
C63.19-2011 HAC Category:
M4 (RF EMISSIONS CATEGORY)
Note: This revised Test Report (S/N: 1M1710050266-11-R1.A3L) supersedes and replaces the previously issued test report on the
same subject device for the same type of testing as indicated. Please discard or destroy the previously issued test report(s) and
dispose of it accordingly.
This wireless portable device has been shown to be hearing-aid compatible under the above rated category, specified in ANSI/IEEE
Std. C63.19-2011 and has been tested in accordance with the specified measurement procedures. Hearing-Aid Compatibility is
based on the assumption that all production units will be designed electrically identical to the device tested in this report. Test results
reported herein relate only to the item(s) tested. North America bands only.
I attest to the accuracy of data. All measurements reported herein were performed by me or were made under my supervision and
are correct to the best of my knowledge and belief. I assume full responsibility for the completeness of these measurements and
vouch for the qualifications of all persons taking them.
FCC ID: A3LSMA730F
Filename:
Test Dates:
1M1710050266-11-R1.A3L
10/02/2017 - 10/09/2017
© 2017 PCTEST Engineering Laboratory, Inc.
HAC (RF EMISSIONS) TEST REPORT
DUT Type:
Portable Handset
Approved by:
Quality Manager
Page 1 of 87
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mechanical, including photocopying and microfilm, without permission in writing from PCTEST Engineering Laboratory, Inc. If you have any questions about this international copyright or have an
enquiry about obtaining additional rights to this report or assembly of contents thereof, please contact [email protected]
T A B L E
O F
C O N T E N T S
1.
INTRODUCTION ............................................................................................................................. 3
2.
DUT DESCRIPTION ........................................................................................................................ 4
3.
ANSI/IEEE C63.19 PERFORMANCE CATEGORIES .................................................................... 6
4.
SYSTEM SPECIFICATIONS ........................................................................................................... 7
5.
TEST PROCEDURE ..................................................................................................................... 12
6.
SYSTEM CHECK .......................................................................................................................... 14
7.
MODULATION INTERFERENCE FACTOR.................................................................................. 17
8.
RF CONDUCTED POWER MEASUREMENTS............................................................................ 22
9.
JUSTIFICATION OF HELD TO EAR MODES TESTED ............................................................... 41
10.
LTE TDD UPLINK-DOWNLINK CONFIGURATION...................................................................... 42
11.
OVERALL MEASUREMENT SUMMARY ..................................................................................... 43
12.
EQUIPMENT LIST ......................................................................................................................... 45
13.
MEASUREMENT UNCERTAINTY ................................................................................................ 46
14.
TEST DATA ................................................................................................................................... 47
15.
CALIBRATION CERTIFICATES.................................................................................................... 54
16.
CONCLUSION ............................................................................................................................... 82
17.
REFERENCES .............................................................................................................................. 83
18.
TEST PHOTOGRAPHS ................................................................................................................ 85
FCC ID: A3LSMA730F
Filename:
Test Dates:
1M1710050266-11-R1.A3L
10/02/2017 - 10/09/2017
© 2017 PCTEST Engineering Laboratory, Inc.
HAC (RF EMISSIONS) TEST REPORT
DUT Type:
Portable Handset
Approved by:
Quality Manager
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mechanical, including photocopying and microfilm, without permission in writing from PCTEST Engineering Laboratory, Inc. If you have any questions about this international copyright or have an
enquiry about obtaining additional rights to this report or assembly of contents thereof, please contact [email protected]
1.
INTRODUCTION
On July 10, 2003, the Federal Communications Commission (FCC) adopted new rules requiring wireless
manufacturers and service providers to provide digital wireless phones that are compatible with hearing
aids. The FCC has modified the exemption for wireless phones under the Hearing Aid Compatibility Act of
1998 (HAC Act) in WT Docket 01-309 RM-86581 to extend the benefits of wireless telecommunications to
individuals with hearing disabilities. These benefits encompass business, social and emergency
communications, which increase the value of the wireless network for everyone. An estimated more than
10% of the population in the United States show signs of hearing impairment and of that fraction, almost
80% use hearing aids. Approximately 500 million people worldwide suffer from hearing loss.
Compatibility Tests Involved:
The standard calls for wireless communications devices to be measured for:
 RF Electric-field emissions
 T-coil mode, magnetic-signal strength in the audio band
 T-coil mode, magnetic-signal frequency response through the audio band
 T-coil mode, magnetic-signal and noise articulation index
The hearing aid must be measured for:
 RF immunity in microphone mode
 RF immunity in T-coil mode
In the following tests and results, this report includes the evaluation for a wireless communications
device.
Figure 1-1 Hearing Aid in-vitu
FCC Rule & Order, WT Docket 01-309 RM-8658
FCC ID: A3LSMA730F
Filename:
Test Dates:
1M1710050266-11-R1.A3L
10/02/2017 - 10/09/2017
© 2017 PCTEST Engineering Laboratory, Inc.
HAC (RF EMISSIONS) TEST REPORT
DUT Type:
Portable Handset
Approved by:
Quality Manager
Page 3 of 87
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mechanical, including photocopying and microfilm, without permission in writing from PCTEST Engineering Laboratory, Inc. If you have any questions about this international copyright or have an
enquiry about obtaining additional rights to this report or assembly of contents thereof, please contact [email protected]
2.
DUT DESCRIPTION
FCC ID:
A3LSMA730F
Manufacturer:
Samsung Electronics Co., Ltd.
129, Samsung-ro, Maetan dong,
Yeongtong-gu, Suwon-si
Gyeonggi-do 16677, Korea
Model:
SM-A730F/DS
Additional Model(s):
SM-A730F
Serial Number:
29495
Antenna Configurations:
Internal Antenna
HAC Test Configurations:
GSM 850, 128, 190, 251, BT Off, WLAN Off, LTE Off
GSM 1900, 512, 661, 810, BT Off, WLAN Off, LTE Off
LTE TDD B41; BW's: 20MHz; 39750, 40185, 40620, 41055, 41490; BT Off, WLAN Off
DUT Type:
Portable Handset
Table 2-1: A3LSMA730F HAC Air Interfaces
Air‐Interface
Band
(MHz)
GSM
1900
850
GPRS/EDGE
Type Transport
HAC Tested
Simultaneous
But Not Tested
Voice over Digital
Transport
OTT Capability
Additional GSM Power
Reduction
VO
Yes
Yes: WIFI or BT
N/A
No
DT
No
Yes: WIFI or BT
Yes
No
VD
No¹
Yes: WIFI or BT
N/A
N/A
DT
No
Yes: WIFI or BT
Yes
N/A
VD
No1
Yes: WIFI or BT
Yes
N/A
VD
Yes
Yes: WIFI or BT
Yes
N/A
VD
No1
Yes: GSM, UMTS, or LTE
Yes
N/A
N/A
N/A
850
UMTS
1700
1900
HSPA
700 (B12)
700 (B17)
780 (B13)
LTE (FDD)
850 (B5)
850 (B26)
1700 (B4)
1700 (B66)
1900 (B2)
LTE (TDD)
2600 (B41)
2450
5200
WIFI
5300
5500
5800
BT
2450
DT
No
Yes: GSM, UMTS, or LTE
Type Transport
Notes:
VO = Voice Only
1. Evaluated for MIF and low‐power exemption.
DT = Digital Data ‐ Not intended for CMRS Service
VD = CMRS and Data Transport
FCC ID: A3LSMA730F
Filename:
Test Dates:
1M1710050266-11-R1.A3L
10/02/2017 - 10/09/2017
© 2017 PCTEST Engineering Laboratory, Inc.
HAC (RF EMISSIONS) TEST REPORT
DUT Type:
Portable Handset
Approved by:
Quality Manager
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mechanical, including photocopying and microfilm, without permission in writing from PCTEST Engineering Laboratory, Inc. If you have any questions about this international copyright or have an
enquiry about obtaining additional rights to this report or assembly of contents thereof, please contact [email protected]
I.
Power Reduction for WIFI
This device uses an independent fixed level power reduction mechanism for all WIFI operations during
voice or VoIP held to ear scenarios. Reduced powers were used to evaluate for low-power exemption in
Section 9.II for WIFI. Detailed descriptions of the power reduction mechanism are included in the
operational description.
II. LTE Band Selection
This device supports the following pair of LTE bands with similar frequencies: LTE B12 & B17, and B4 &
B66. This pair of LTE bands has the same target power and shares the same transmission path. Since
the supported frequency span for the smaller LTE band is completely covered by the larger LTE band,
only the larger LTE band (LTE B12, and B66) was evaluated for hearing-aid compliance.
FCC ID: A3LSMA730F
Filename:
Test Dates:
1M1710050266-11-R1.A3L
10/02/2017 - 10/09/2017
© 2017 PCTEST Engineering Laboratory, Inc.
HAC (RF EMISSIONS) TEST REPORT
DUT Type:
Portable Handset
Approved by:
Quality Manager
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mechanical, including photocopying and microfilm, without permission in writing from PCTEST Engineering Laboratory, Inc. If you have any questions about this international copyright or have an
enquiry about obtaining additional rights to this report or assembly of contents thereof, please contact [email protected]
3.
ANSI/IEEE C63.19 PERFORMANCE CATEGORIES
I. RF EMISSIONS
The ANSI Standard presents performance requirements for acceptable interoperability of hearing aids
with wireless communications devices. When these parameters are met, a hearing aid operates
acceptably in close proximity to a wireless communications device.
Category
Telephone RF Parameters
Near field Category
E-field emissions
CW
dB(V/m)
f < 960 MHz
M1
50 to 55
M2
45 to 50
M3
40 to 45
M4
< 40
f > 960 MHz
M1
40 to 45
M2
35 to 40
M3
30 to 35
M4
< 30
Table 3-1
WD near-field categories as defined in ANSI C63.19-2011
FCC ID: A3LSMA730F
Filename:
Test Dates:
1M1710050266-11-R1.A3L
10/02/2017 - 10/09/2017
© 2017 PCTEST Engineering Laboratory, Inc.
HAC (RF EMISSIONS) TEST REPORT
DUT Type:
Portable Handset
Approved by:
Quality Manager
Page 6 of 87
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mechanical, including photocopying and microfilm, without permission in writing from PCTEST Engineering Laboratory, Inc. If you have any questions about this international copyright or have an
enquiry about obtaining additional rights to this report or assembly of contents thereof, please contact [email protected]
4.
SYSTEM SPECIFICATIONS
ER3DV6 E-Field Probe Description
Construction:
Calibration:
Frequency:
Directivity
Dynamic Range
Linearity:
Dimensions
One dipole parallel, two dipoles normal to probe axis
Built-in shielding against static charges
In air from 100 MHz to 3.0 GHz
(absolute accuracy ±6.0%, k=2)
100 MHz to > 6 GHz;
Linearity: ± 0.2 dB (100 MHz to 3 GHz)
± 0.2 dB in air (rotation around probe axis)
± 0.4 dB in air (rotation normal to probe axis)
2 V/m to > 1000 V/m
(M3 or better device readings fall well below diode
compression point)
± 0.2 dB
Overall length: 330 mm (Tip: 16 mm)
Tip diameter: 8 mm (Body: 12 mm)
Distance from probe tip to dipole centers: 2.5 mm
Figure 4-1
E-field Free-space
Probe
Probe Tip Description
HAC field measurements take place in the close near field with high gradients. Increasing the measuring
distance from the source will generally decrease the measured field values (in case of the validation
dipole approx. 10% per mm).
The electric field probes have an irregular internal geometry because it is physically not possible to have
the 3 orthogonal sensors situated with the same center. The effect of the different sensor centers is
accounted for in the HAC uncertainty budget ("sensor displacement"). Their geometric center is at 2.5mm
from the tip, and the element ends are 1.1mm closer to the tip.
The antistatic shielding inside the probe is connected to the probe connector case.
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Instrumentation Chain
Equation 1
Probe Response to Frequency
The E-field sensors have inherently a very flat frequency response. They are calibrated with a number of
frequencies resulting in a common calibration factor, with the frequency behavior documented in the
calibration certificate (See also below).
Figure 4-2 E-Field Probe Frequency Response
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SPEAG Robotic System
E-field measurements are performed using the DASY5 automated dosimetric assessment system.
The DASY5 is made by Schmid & Partner Engineering AG (SPEAG) in Zurich, Switzerland and
consists of high precision robotics system (Staubli), robot controller, Intel CORE i7 computer, nearfield probe, probe alignment sensor, and the HAC phantom. The robot is a six-axis industrial robot
performing precise movements to position the probe to the location (points) of maximum
electromagnetic field (EMF).
Figure 4-3
SPEAG Robotic System
System Hardware
A cell controller system contains the power supply, robot controller, teach pendant (Joystick), and a
remote control used to drive the robot motors. The PC consists of the computer with operating
system and RF Measurement Software DASY5 v52.8 (with HAC Extension), A/D interface card,
monitor, mouse, and keyboard. The Staubli Robot is connected to the cell controller to allow software
manipulation of the robot. A data acquisition electronic (DAE) circuit that performs the signal
amplification, signal multiplexing, AD-conversion, offset measurements, mechanical surface
detection, collision detection, etc. is connected to the Electro-optical coupler (EOC). The EOC
performs the conversion from the optical into digital electric signal of the DAE and transfers data to
the PC plug-in card.
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System Electronics
The DAE consists of a highly sensitive electrometer-grade preamplifier with auto-zeroing, a channel
and gain-switching multiplexer, a fast 16 bit AD-converter and a command decoder and control logic
unit. Transmission to the PC-card is accomplished through an optical downlink for data and status
information and an optical uplink for commands and clock lines. The mechanical probe mounting
device includes two different sensor systems for frontal and sidewise probe contacts. They are also
used for mechanical surface detection and probe collision detection. The robot uses its own controller
with a built in VME-bus computer.
Figure 4-4
SPEAG Robotic System Diagram
DASY5 Instrumentation Chain
The first step of the evaluation is a linearization of the filtered input signal to account for the
compression characteristics of the detector diode. The compensation depends on the input
signal, the diode type and the DC-transmission factor from the diode to the evaluation electronics.
If the exciting field is pulsed, the crest factor of the signal must be known to correctly compensate
for peak power. The formula for each channel can be given as:
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The measurement/integration time per point, as specified by the system manufacturer is >500ms.
The signal response time is evaluated as the time required by the system to reach 90% of the
expected final value after an on/off switch of the power source with an integration time of 500ms
and a probe response time of <5 ms. In the current implementation, DASY5 waits longer than
100ms after having reached the grid point before starting a measurement, i.e., the response time
uncertainty is negligible.
If the device under test does not emit a CW signal, the integration time applied to measure the
electric field at a specific point may introduce additional uncertainties due to the discretization.
The tolerances for the different systems had the worst-case of 2.6%.
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5.
TEST PROCEDURE
I. RF EMISSIONS
Per 5.5.1.2 (a-c)
Per 5.5.1.2 (d-f)
Per 5.5.1.2 (g-h) & 5.5.1.3
Per 5.5.1.2 (i-j)
Figure 5-1 RF Emissions Flow Chart
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Test Setup
Figure 5-2
E-Field Emissions Test Setup Diagram (See Test
Photographs for actual WD scan grid overlay)
Figure 5-3
HAC Phantom
RF Emissions Test Procedure:
The following illustrate a typical RF emissions test scan over a wireless communications device:
1. Proper operation of the field probe, probe measurement system, other instrumentation, and the
positioning system was confirmed.
2. WD is positioned in its intended test position, acoustic output point of the device perpendicular to
the field probe.
3. The WD operation for maximum rated RF output power was configured and confirmed with the
base station simulator, at the test channel and other normal operating parameters as intended for
the test. The battery was ensured to be fully charged before each test.
4. The center sub-grid was centered over the center of the acoustic output (also audio band
magnetic output, if applicable). The WD audio output was positioned tangent (as physically
possible) to the measurement plane.
5. A surface calibration was performed before each setup change to ensure repeatable spacing and
proper maintenance of the measurement plane using the HAC Phantom.
6. The measurement system measured the field strength at the reference location.
7. Measurements at 2mm or 5mm increments in the 5 x 5 cm region were performed at a distance
15 mm from the center point of the probe measurement element to the WD. A 360o rotation about
the azimuth axis at the maximum interpolated position was measured. For the worst-case
condition, the peak reading from this rotation was used in re-evaluating the HAC category.
8. The system performed a drift evaluation by measuring the field at the reference location. If the
power drift deviated by more than 5%, the HAC test and drift measurements were repeated.
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6.
SYSTEM CHECK
I. System Check Parameters
The input signal was an un-modulated continuous wave. The following points were taken into
consideration in performing this check:
•
•
•
Average Input Power P = 100mW RMS (20dBm RMS) after adjustment for return loss
The test fixture must meet the 2 wavelength separation criterion
The proper measurement of the 15 mm probe to dipole separation, which is measured from top
surface of the dipole to the calibration reference point of the sensor, defined by the probe
manufacturer is shown in the following diagram:
E-field probe
Housing
Manufactures
Probe Calibration
Reference point
15 mm
Top surface of dipole
Dipole
arm
Center of dipole
Figure 6-1
Separation Distance from Dipole to Field Probe
RF power was recorded using both an average reading meter and a peak reading meter. Readings of the
probe are provided by the measurement system.
To assure proper operation of the near-field measurement probe the input power to the dipole shall be
commensurate with the full rated output power of the wireless device [e.g. - for a cellular phone wireless
device the average peak antenna input power will be on the order of 100mW (20dBm) RMS] after
adjustment for any mismatch.
II. Validation Procedure
A dipole antenna meeting the requirements given in C63.19 was placed in the position normally occupied
by the WD.
The length of the dipole was scanned, and the average peak value was recorded.
Measurement of CW
Using the near-field measurement system, scan the antenna over the radiating dipole and record the
greatest field reading observed. Due to the nature of E-fields about free-space dipoles, the two E-field
peaks measured over the dipole are averaged to compensate for non-parallelity of the setup (see
manufacturer method on dipole calibration certificates, page 2). Field strength measurements shall be
made only when the probe is stationary.
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RF power was recorded using both an average and a peak power reading meter.
Output Power Meter
Signal
Generator
Amplifier
Directional Coupler
Output Power Meter
Signal
Generator
Amplifier
Directional Coupler
Reference Dipole
Reference Dipole
Power Meter
Reference
Power Meter
Reference
Figure 6-2
Setup for Desired Output Power to Dipole
Figure 6-3
Setup to Dipole
Using this setup configuration, the signal generator was adjusted for the desired output power (100mW)
at a specified frequency. The reference power from the coupled port of the directional coupler is
recorded. Next, the output cable is connected to the reference dipole, as shown in Figure 6-3.
The input signal level was adjusted until the reference power from the coupled port of the directional
coupler was the same as previously recorded, to compensate for the impedance mismatch between the
output cable and the reference dipole. To assure proper operation of the near-field measurement probe
the input power to the reference dipole was verified to the full rated output power of the wireless device.
The dipole was secured in a holder in a manner to meet the 20 dB reflection. The near-field measurement
probe was positioned over the dipole. The antenna was scanned over the appropriate sized area to cover
the dipole from end to end. SPEAG uses 2D interpolation algorithms between the measured points.
Please see below two dimensional plots showing that the interpolated values interpolate smoothly
between 5mm steps for a free-space RF dipole:
Figure 6-4
2-D Raw Data from scan along dipole axis
Figure 6-5
2-D Interpolated points from scan along dipole axis
Figure 6-6
2-D Raw Data from scan along transverse axis
Figure 6-7
2-D Interpolated points from scan along transverse axis
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III. System Check Results
Validation Results
Date
Frequency
(MHz)
Probe S/N
DAE S/N
Dipole S/N
Input
Power
(dBm)
E-field
Result
(V/m)
Target
Field
(V/m)
Deviation
10/2/2017
835
2353
859
1082
20.0
112.4
106.8
5.2%
10/2/2017
1880
2353
859
1064
20.0
93.5
89.6
4.4%
10/9/2017
2600
2353
859
1013
20.0
90.1
84.5
6.6%
Figure 6-8
System Check Setup
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7.
MODULATION INTERFERENCE FACTOR
I. Measuring Modulation Interference Factors
For any specific fixed and repeatable modulated signal, a modulation interference factor (MIF, expressed
in dB) may be determined that relates its interference potential to its steady-state RMS signal level or
average power level. This factor is a function only of the audio-frequency amplitude modulation
characteristics of the signal and is the same for field-strength and conducted power measurements. The
MIF is valid only for a specific repeatable audio-frequency amplitude modulation characteristic; any
change in modulation characteristic requires determination and application of a new MIF.
The MIF may be determined using a radiated RF field or a conducted RF signal:
a. Using RF illumination or conducted coupling, apply the specific modulated signal in question
to the measurement system at a level within its confirmed operating dynamic range.
b. Measure the steady-state RMS level at the output of the fast probe or sensor.
c. Measure the steady-state average level at the weighting output.
d. Without changing the square-law detector or weighting system, and using RF illumination or
conducted coupling, substitute for the specific modulated signal a 1 kHz, 80% amplitude
modulated carrier at the same frequency and adjust its strength until the level at the
weighting output equals the step c) measurement.
e. Without changing the carrier level from step d), remove the 1 kHz modulation and again
measure the steady-state RMS level indicated at the output of the fast probe or sensor.
f. The MIF for the specific modulation characteristic is provided by the ratio of the step e)
measurement to the step b) measurement, expressed in dB (20 × log[(step e)/(step b)]).
The following procedure was used to measure the MIF using the SPEAG Audio Interference Analyzer
(AIA), Type No: SE UMS 170 CB, Serial No.: 1010:
1. The device was placed into a simulated call using a base station simulator or set to transmit
using test software for a given mode.
2. The device was then set to continuously transmit at maximum power.
3. Using a coupler if needed, the device output signal was connected to the RF In port of the
AIA, which was connected to a desktop computer. Alternatively, a radiated RF signal may be
used with the AIA’s built-in antenna.
4. The MIF measurement procedure in the DASY software was run, and the resulting MIF value
was recorded.
5. Steps 1-4 were repeated for all CMRS air interfaces, frequency bands, and modulations.
The modulation interference factors obtained were applied to readings taken of the actual wireless device
in order to obtain an accurate audio interference level reading using the formula:
Audio Interference Level [dB(V/m)] = 20 * log[Raw Field Value (V/m)] + MIF (dB)
Because the MIF value is output power independent, MIF values for a given mode should be constant
across all devices; however, per C63.19-2011 §D.7, MIF values should be measured for each device
being evaluated. The voice modes for this device have been investigated in this section of the report.
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II. MIF Measurement Block Diagrams
Figure 7-1
MIF Measurement Setup
for licensed modes
Figure 7-2
MIF Measurement Setup
for unlicensed modes
III. Measured Modulation Interference Factors:
Table 7-1
GSM Modulation Interference Factors1
GSM850
128
190
251
512
Mode
3.52
GSM
3.52
3.52
GSM1900
3.53
661
810
3.53
3.53
Table 7-2
UMTS Modulation Interference Factors1
Mode
UMTS
12.2 kbps
RMC
12.2 kbps
AMR
UMTS V
UMTS IV
UMTS II
4132
4183
4233
1312
1412
1513
9262
9400
9538
-20.30
-19.81
-18.57
-20.59
-21.60
-22.26
-22.33
-20.54
-21.22
-19.49
-19.62
-19.20
-20.74
-20.96
-20.38
-20.65
-21.35
-20.10
Note: Measured MIF values may be lower than sample MIF values provided in ANSI C63.19-2011 Annex D.7 Table
D.5 due to manufacturing variations for each device, however per Annex D.7, the sample MIF values of Table D.5 are
not intended to substitute for measurements of actual devices under test and their respective operating modes.
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Table 7-3
LTE FDD Modulation Interference Factors1,2,3
LTE
Band
Frequency
[MHz]
Channel
Bandwidth
[MHz]
Modulation
RB Size
RB Offset
MIF
[dB]
-10.56
1880.0
18900
20
16QAM
66
1745.0
132322
20
16QAM
-9.94
12
707.5
23095
10
16QAM
-10.14
13
782.0
23230
10
16QAM
-9.88
836.5
20525
10
16QAM
-10.17
26
831.5
26865
15
16QAM
-10.37
13
782.0
23230
10
QPSK
-14.00
13
782.0
23230
10
64QAM
-10.01
13
782.0
23230
10
16QAM
25
-10.27
13
782.0
23230
10
16QAM
49
-10.27
13
782.0
23230
10
16QAM
25
-16.04
13
782.0
23230
10
16QAM
50
-16.84
13
782.0
23230
16QAM
-10.68
Table 7-4
LTE TDD Modulation Interference Factors1,4
LTE
Band
Frequency
[MHz]
Channel
Bandwidth
[MHz]
Modulation
RB Size
RB Offset
MIF
[dB]
41
2593.0
40620
20
16QAM
1.46
41
2593.0
40620
20
64QAM
1.45
41
2593.0
40620
20
QPSK
1.42
41
2593.0
40620
20
16QAM
50
1.43
41
2593.0
40620
20
16QAM
99
1.42
41
2593.0
40620
20
16QAM
50
1.33
41
2593.0
40620
20
16QAM
100
1.33
41
2593.0
40620
15
16QAM
1.43
41
2593.0
40620
10
16QAM
1.43
41
2593.0
40620
16QAM
1.45
41
2506.0
39750
20
16QAM
1.43
41
2549.5
40185
20
16QAM
1.49
41
2636.5
41055
20
16QAM
1.41
41
2680.0
41490
20
16QAM
1.47
Note: Measured MIF values may be lower than sample MIF values provided in ANSI C63.19-2011 Annex D.7 Table
D.5 due to manufacturing variations for each device, however per Annex D.7, the sample MIF values of Table D.5 are
not intended to substitute for measurements of actual devices under test and their respective operating modes.
Note: All FDD LTE bands were found to have substantially similar MIF values given similar RB, BW, and modulation
configurations.
Note: Note: Since LTE Band 13 at 10 MHz bandwidth is the overall worst case LTE MIF and does not support 3
non-overlapping channels, MIF measurements were made only on the middle channel.
Note: LTE TDD MIFs were taken using UL-DL Configuration 2. More information about the chosen UL-DL
Configuration can be found in Section 10.
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Table 7-5
802.11b (2.4GHz, SISO) Modulation Interference Factors1,2
802.11b MIF Measurements [dB]
Mode
Data Rate [Mbps]
5.5
11
802.11b
-14.48
-13.80
-10.56
-10.33
Mode
802.11g
Mode
802.11n
Mode
802.11a
Mode
802.11n
Table 7-6
802.11g (2.4GHz, SISO) Modulation Interference Factors1,2
802.11g MIF Measurements [dB]
Data Rate [Mbps]
12
18
24
36
48
-11.59
-10.89
-10.47
-9.71
-9.46
-9.55
-10.18
54
-10.28
Table 7-7
802.11n (2.4GHz, SISO) Modulation Interference Factors1,2
802.11n (2.4GHz) MIF Measurements [dB]
Data Rate [Mbps]
6.5
13
19.5
26
39
52
58.5
-11.71
-10.53
-9.85
-9.60
-9.76
-10.18
-10.30
65
-10.61
Table 7-8
802.11a (5GHz, 20MHz BW, SISO) Modulation Interference Factors1,2
802.11a MIF Measurements [dB]
Data Rate [Mbps]
12
18
24
36
48
-4.92
-4.07
-3.71
-3.07
-2.58
-2.17
-1.99
54
-1.80
Table 7-9
802.11n (5GHz, 20MHz BW, SISO) Modulation Interference Factors1,2
20MHz BW 802.11n (5GHz) MIF Measurements [dB]
Data Rate [Mbps]
6.5
13
19.5
26
39
52
58.5
-4.78
-3.62
-3.00
-2.65
-2.12
-1.90
-2.84
65
-1.98
Table 7-10
802.11ac (5GHz, 20MHz BW, SISO) Modulation Interference Factors1,2
20MHz BW 802.11ac (5GHz) MIF Measurements [dB]
Data Rate [Mbps]
Mode
802.11ac
6.5
-4.86
13
-3.72
19.5
-3.06
26
-2.71
39
-2.22
52
-2.01
58.5
-1.80
65
-1.94
78
-1.71
Note: Measured MIF values may be lower than sample MIF values provided in ANSI C63.19-2011 Annex D.7 Table
D.5 due to manufacturing variations for each device, however per Annex D.7, the sample MIF values of Table D.5 are
not intended to substitute for measurements of actual devices under test and their respective operating modes.
Note: WIFI MIF values were found to be independent of the transmit channel.
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Table 7-11
802.11n (5GHz, 40MHz BW, SISO) Modulation Interference Factors1,2
40MHz BW 802.11n (5GHz) MIF Measurements [dB]
Data Rate [Mbps]
13.5
27
40.5
54
81
108
121.5
-4.10
-2.47
-2.07
-1.84
-1.87
-1.77
-2.03
Mode
802.11n
135
-1.94
Table 7-12
802.11ac (5GHz, 40MHz BW, SISO) Modulation Interference Factors1,2
40MHz BW 802.11ac (5GHz) MIF Measurements [dB]
Data Rate [Mbps]
Mode
802.11ac
13.5
-3.55
27
-2.40
40.5
-1.98
54
-1.94
81
-1.78
108
-1.78
121.5
-2.06
135
-2.00
180
-1.94
Table 7-13
802.11ac (5GHz, 80MHz BW, SISO) Modulation Interference Factors1,2
80MHz BW 802.11ac (5GHz) MIF Measurements [dB]
Data Rate [Mbps]
Mode
802.11ac
29.3
-2.31
58.5
-1.80
87.8
-1.86
117
-1.82
175.5
-1.82
234
-1.99
263.3
-2.30
292.5
-2.23
351
-2.08
390
-2.13
Note: Measured MIF values may be lower than sample MIF values provided in ANSI C63.19-2011 Annex D.7 Table
D.5 due to manufacturing variations for each device, however per Annex D.7, the sample MIF values of Table D.5 are
not intended to substitute for measurements of actual devices under test and their respective operating modes.
Note: WIFI MIF values were found to be independent of the transmit channel.
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8.
RF CONDUCTED POWER MEASUREMENTS
I. Procedures Used to Establish RF Signal for HAC Testing
The handset was placed into a simulated call using a base station simulator in a shielded chamber.
Such test signals offer a consistent means for testing HAC and are recommended for evaluating HAC.
Measurements were taken with a fully charged battery. In order to verify that the device was tested and
maintained at full power, this was configured with the base station simulator.
II. HAC Measurement Conditions
Output Power Verification
Maximum output power is verified on the High, Middle and Low channels for all applicable air interfaces.
See Table 8-1 for air interface specific settings of transmit power parameters.
Table 8-1
Power Control Parameters and Settings by Air Interface
Air Interface:
Parameter Name:
Parameter Set To:
GSM
PCL
GSM850: “5”; GSM1900: “0”
UMTS
TPC
“All 1’s”
LTE
TPC
“Max Power”
WIFI
PLS
Mfr Specified
III. Setup Used to Measure RF Conducted Powers
Power measurements for licensed modes were performed using a base station simulator under digital
average power. Power measurements for unlicensed modes were performed using a power meter and
power sensor.
Figure 8-1
Power Measurement Setup for licensed modes
Figure 8-2
Power Measurement Setup for unlicensed modes
IV. GSM Conducted Powers
Band
GSM 850
GSM 1900
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Channel
GSM
[dBm]
CS
(1 Slot)
128
32.54
190
32.73
251
32.81
512
29.93
661
29.84
810
29.99
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V. UMTS Conducted Powers
Cellular Band [dBm]
Mode
AWS Band [dBm]
PCS Band [dBm]
4132
4183
4233
1312
1412
1513
9262
9400
9538
12.2 kbps RMC
24.64
24.65
24.60
22.15
22.46
22.38
22.45
22.35
22.61
12.2 kbps AMR
24.64
23.56
24.59
22.13
21.87
22.35
22.41
21.30
22.61
VI. LTE Conducted Powers
a. LTE Band 12
Table 8-2
LTE Band 12 (707.5MHz) Conducted Powers – 10MHz Bandwidth
LTE Band 12
10 MHz Bandwidth
Mid Channel
Modulation
RB Offset
23095
(707.5 MHz)
Conducted Power
[dBm]
23.41
25
23.40
RB Size
QPSK
49
23.37
22.40
25
12
22.36
25
25
22.36
50
22.35
22.45
25
22.11
49
0-1
0-1
22.07
25
21.21
25
12
21.23
25
25
21.30
50
21.32
21.47
25
21.44
64QAM
MPR [dB]
25
16QAM
MPR Allowed per
3GPP [dB]
49
0-2
0-2
21.33
25
20.29
25
12
20.25
25
25
20.22
50
20.22
0-3
Note: Since LTE Band 12 at 10MHz bandwidth does not support 3 non-overlapping channels, conducted
power measurements were made only on the middle channel.
Table 8-3
LTE Band 12 (707.5MHz) Conducted Powers – 5MHz Bandwidth
Low Channel
Modulation
QPSK
RB Size
23095
(707.5 MHz)
23155
(713.5 MHz)
23.22
23.33
12
23.34
23.23
23.35
24
23.28
23.20
23.31
12
22.32
22.36
22.31
22.29
22.26
12
13
22.32
22.35
22.30
22.32
22.29
22.32
22.29
21.98
22.37
12
22.36
21.87
22.37
24
22.32
21.81
22.34
12
21.36
21.24
21.44
21.23
21.30
12
13
21.34
21.21
21.31
21.29
21.19
21.22
21.25
21.09
21.15
12
21.20
21.01
21.12
24
21.15
21.01
21.17
20.23
20.14
20.21
20.14
20.22
12
13
20.23
20.15
20.23
25
20.22
20.15
20.20
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0-1
0-2
0-2
20.26
12
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MPR [dB]
21.36
12
12
MPR Allowed per
3GPP [dB]
22.32
12
25
64QAM
High Channel
23035
(701.5 MHz)
Conducted Power [dBm]
23.23
25
16QAM
RB Offset
LTE Band 12
5 MHz Bandwidth
Mid Channel
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Table 8-4
LTE Band 12 (707.5MHz) Conducted Powers – 3MHz Bandwidth
Low Channel
Modulation
RB Size
RB Offset
23025
(700.5 MHz)
LTE Band 12
3 MHz Bandwidth
Mid Channel
23095
(707.5 MHz)
High Channel
23165
(714.5 MHz)
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
23.29
23.24
23.23
23.40
23.27
23.27
14
23.38
23.26
23.26
22.37
22.24
22.30
22.35
22.24
22.24
22.39
22.20
22.26
15
22.34
22.24
22.29
22.24
22.07
22.05
22.30
21.96
21.93
14
22.26
21.90
21.96
21.26
21.15
21.36
21.29
21.15
21.22
21.27
21.16
21.22
15
21.32
21.08
21.28
21.03
20.95
21.02
21.04
20.93
21.00
14
21.03
20.97
20.97
20.21
20.16
20.24
20.23
20.09
20.14
20.22
20.08
20.19
15
20.15
20.09
20.17
0-1
0-1
0-2
0-2
0-3
Table 8-5
LTE Band 12 (707.5MHz) Conducted Powers – 1.4MHz Bandwidth
Low Channel
Modulation
LTE Band 12
1.4 MHz Bandwidth
Mid Channel
23095
(707.5 MHz)
High Channel
RB Size
RB Offset
23017
(699.7 MHz)
23173
(715.3 MHz)
23.29
23.15
23.29
23.36
23.16
23.28
23.37
23.17
23.28
23.39
23.12
23.31
23.40
23.21
23.33
23.37
23.20
23.32
22.39
22.20
22.29
21.91
22.04
21.93
21.89
21.98
21.96
21.91
22.01
21.89
22.32
22.24
22.24
22.33
22.24
22.25
22.37
22.23
22.29
21.33
21.24
21.34
21.21
20.96
20.99
21.13
20.84
20.87
21.15
20.83
20.90
21.29
21.17
21.23
21.26
21.17
21.19
21.36
21.15
21.22
20.21
20.03
20.17
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
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b. LTE Band 13
Table 8-6
LTE Band 13 (780.0MHz) Conducted Powers – 10MHz Bandwidth
LTE Band 13
10 MHz Bandwidth
Mid Channel
Modulation
RB Size
RB Offset
23230
(782.0 MHz)
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power
[dBm]
QPSK
16QAM
64QAM
22.76
25
22.68
49
22.65
25
21.57
25
12
21.58
25
25
21.55
50
21.55
21.33
25
21.25
0-1
0-1
49
21.28
25
20.46
25
12
20.41
25
25
20.44
50
20.47
20.67
25
20.63
49
20.56
25
19.49
25
12
19.34
25
25
19.35
50
19.43
0-2
0-2
0-3
Table 8-7
LTE Band 13 (780.0MHz) Conducted Powers – 5MHz Bandwidth
LTE Band 13
5 MHz Bandwidth
Mid Channel
Modulation
QPSK
16QAM
64QAM
23230
(782.0 MHz)
Conducted Power
[dBm]
22.70
12
22.58
RB Size
RB Offset
24
22.57
12
21.54
12
21.55
12
13
21.52
25
21.52
21.29
12
21.22
MPR Allowed per
3GPP [dB]
MPR [dB]
0-1
0-1
24
21.25
12
20.43
12
20.40
12
13
20.41
25
20.44
20.37
12
20.40
24
20.42
12
19.47
12
19.38
12
13
19.39
25
19.39
0-2
0-2
0-3
Note: Since LTE Band 13 at 5MHz bandwidth does not support 3 non-overlapping channels, conducted
power measurements were made only on the middle channel.
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c. LTE Band 5
Table 8-8
LTE Band 5 (836.5MHz) Conducted Powers – 10MHz Bandwidth
LTE Band 5 (Cell)
10 MHz Bandwidth
Mid Channel
Modulation
QPSK
16QAM
64QAM
RB Offset
20525
(836.5 MHz)
Conducted Power
[dBm]
24.51
25
24.58
RB Size
49
24.44
25
23.45
25
12
23.40
25
25
23.34
50
23.43
23.34
25
23.37
49
23.38
25
22.51
25
12
22.43
25
25
22.40
50
22.45
22.53
25
22.55
49
22.23
25
21.55
25
12
21.38
25
25
21.29
50
21.34
MPR Allowed per
3GPP [dB]
MPR [dB]
0-1
0-1
0-2
0-2
0-3
Note: Since LTE Band 5 at 10MHz bandwidth does not support 3 non-overlapping channels, conducted
power measurements were made only on the middle channel.
Table 8-9
LTE Band 5 (836.5MHz) Conducted Powers – 5MHz Bandwidth
Low Channel
Modulation
RB Size
RB Offset
20425
(826.5 MHz)
LTE Band 5 (Cell)
5 MHz Bandwidth
Mid Channel
20525
(836.5 MHz)
High Channel
20625
(846.5 MHz)
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
24.15
24.34
24.23
12
24.19
24.39
24.25
24
24.20
24.34
24.25
12
23.33
23.37
23.26
12
23.32
23.37
23.29
12
13
23.29
23.34
23.29
25
23.30
23.39
23.30
22.91
23.34
23.29
12
22.80
23.38
23.23
24
22.85
23.31
23.17
12
22.36
22.36
22.26
12
22.26
22.36
22.25
12
13
22.25
22.34
22.22
25
22.26
22.35
22.25
22.20
22.21
22.37
12
22.29
22.20
22.34
0-1
0-1
0-2
0-2
24
22.13
22.21
22.33
12
21.35
21.38
21.35
12
21.28
21.38
21.32
12
13
21.33
21.37
21.30
25
21.32
21.42
21.24
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Table 8-10
LTE Band 5 (836.5MHz) Conducted Powers – 3MHz Bandwidth
Low Channel
Modulation
LTE Band 5 (Cell)
3 MHz Bandwidth
Mid Channel
20525
(836.5 MHz)
High Channel
20635
(847.5 MHz)
MPR Allowed per
3GPP [dB]
RB Size
RB Offset
20415
(825.5 MHz)
24.13
24.35
24.30
24.21
24.32
24.29
14
24.18
24.33
24.28
23.36
23.39
23.35
23.28
23.37
23.35
23.29
23.37
23.32
15
23.32
23.34
23.34
23.05
23.00
23.29
22.79
23.06
23.26
14
22.73
23.07
23.19
22.31
22.38
22.38
22.22
22.36
22.42
22.25
22.40
22.40
15
22.27
22.37
22.35
21.95
22.24
22.31
21.96
22.21
22.22
14
21.97
22.30
22.19
21.36
21.43
21.32
21.28
21.39
21.42
21.28
21.34
21.46
15
21.23
21.37
21.35
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
0-1
0-1
0-2
0-2
0-3
Table 8-11
LTE Band 5 (836.5MHz) Conducted Powers – 1.4MHz Bandwidth
Low Channel
Modulation
RB Size
RB Offset
20407
(824.7 MHz)
LTE Band 5 (Cell)
1.4 MHz Bandwidth
Mid Channel
20525
(836.5 MHz)
High Channel
20643
(848.3 MHz)
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
24.22
24.37
24.34
24.26
24.32
24.37
24.27
24.34
24.37
24.24
24.26
24.37
24.27
24.27
24.35
24.22
24.25
24.34
23.32
23.30
23.38
23.07
23.11
23.24
23.03
23.15
23.25
22.99
23.09
23.20
23.22
23.28
23.31
23.23
23.29
23.35
23.20
23.34
23.32
22.24
22.29
22.31
22.25
22.00
22.30
22.26
22.05
22.34
22.17
22.04
22.28
22.27
22.31
22.42
22.21
22.30
22.44
22.25
22.32
22.36
21.30
21.30
21.34
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d. LTE Band 26
Table 8-12
LTE Band 26 (836.5MHz) Conducted Powers – 15MHz Bandwidth
LTE Band 26 (Cell)
15 MHz Bandwidth
Modulation
QPSK
16QAM
64QAM
Mid Channel
26865
(831.5 MHz)
Conducted Power
[dBm]
23.05
36
23.12
RB Size
RB Offset
74
22.98
36
21.95
36
18
21.96
36
37
21.92
75
21.87
21.68
36
21.76
74
21.63
36
21.03
36
18
21.06
36
37
20.99
75
21.04
20.98
36
20.97
74
20.82
36
20.07
36
18
20.03
36
37
20.00
75
19.95
MPR Allowed per
3GPP [dB]
MPR [dB]
0-1
0-1
0-2
0-2
0-3
Note: Since LTE Band 26 at 15MHz bandwidth does not support 3 non-overlapping channels, conducted
power measurements were made only on the middle channel.
Table 8-13
LTE Band 26 (831.5MHz) Conducted Powers – 10MHz Bandwidth
Modulation
QPSK
16QAM
64QAM
RB Size
RB Offset
Low Channel
26740
(819.0 MHz)
LTE Band 26 (Cell)
10 MHz Bandwidth
Mid Channel
26865
(831.5 MHz)
Conducted Power [dBm]
High Channel
26990
(844.0 MHz)
22.97
22.86
22.88
25
22.84
22.82
22.78
49
22.94
22.84
22.72
25
22.02
21.85
21.81
25
12
21.96
21.93
21.79
25
25
21.97
21.83
21.70
50
21.98
21.84
21.78
22.00
21.98
21.81
25
21.84
21.99
21.83
49
21.90
21.77
21.66
25
21.00
21.00
20.90
25
12
20.95
20.95
20.79
25
25
20.92
20.90
20.84
50
20.98
20.98
20.81
21.12
20.92
20.80
25
21.03
20.87
20.75
MPR Allowed per
3GPP [dB]
MPR [dB]
0-1
0-1
0-2
0-2
49
21.03
20.77
20.82
25
20.00
19.86
19.85
25
12
19.93
19.94
19.84
25
25
19.94
19.88
19.81
50
19.93
19.80
19.95
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Table 8-14
LTE Band 26 (831.5MHz) Conducted Powers – 5MHz Bandwidth
LTE Band 26 (Cell)
5 MHz Bandwidth
Modulation
RB Size
RB Offset
Low Channel
Mid Channel
High Channel
26715
(816.5 MHz)
26865
(831.5 MHz)
27015
(846.5 MHz)
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
22.98
23.02
23.06
12
23.09
22.98
23.08
24
23.08
22.93
23.04
12
21.97
21.91
21.96
12
22.01
21.88
22.05
12
13
22.00
21.95
21.90
25
21.96
21.94
21.88
21.96
21.97
21.90
12
21.87
21.88
22.00
24
21.81
21.89
21.81
12
21.02
21.00
20.92
12
21.08
20.97
20.93
12
13
20.96
21.03
20.92
25
21.02
21.05
20.93
21.06
20.82
21.01
12
21.14
20.90
21.07
0-1
0-1
0-2
0-2
24
21.12
20.85
20.98
12
20.09
20.11
19.95
12
20.00
20.05
19.92
12
13
20.05
20.06
19.94
25
20.10
20.03
19.93
0-3
Table 8-15
LTE Band 26 (831.5MHz) Conducted Powers – 3MHz Bandwidth
Low Channel
Modulation
LTE Band 26 (Cell)
3 MHz Bandwidth
Mid Channel
26865
(831.5 MHz)
High Channel
27025
(847.5 MHz)
MPR Allowed per
3GPP [dB]
RB Size
RB Offset
26705
(815.5 MHz)
23.02
22.88
22.98
22.99
22.97
22.97
14
22.98
22.93
22.94
21.92
21.84
21.88
21.94
21.81
21.84
21.97
21.80
21.91
15
21.99
21.82
21.85
21.92
21.86
21.83
21.95
21.75
21.78
14
21.92
21.80
21.83
20.94
20.90
20.88
20.97
20.88
20.93
20.95
20.94
20.92
15
20.98
20.87
20.94
20.94
20.84
20.94
20.92
20.85
20.99
14
20.91
20.84
20.86
19.94
19.81
19.86
19.92
19.93
19.93
19.99
19.92
19.95
15
19.87
19.93
19.89
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
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Table 8-16
LTE Band 26 (831.5MHz) Conducted Powers – 1.4MHz Bandwidth
Modulation
QPSK
16QAM
64QAM
Low Channel
26697
(814.7 MHz)
LTE Band 26 (Cell)
1.4 MHz Bandwidth
Mid Channel
26865
(831.5 MHz)
Conducted Power [dBm]
High Channel
27033
(848.3 MHz)
MPR Allowed per
3GPP [dB]
RB Size
RB Offset
22.95
22.95
22.97
23.00
22.98
23.09
23.01
22.99
23.00
23.02
22.96
23.05
23.00
23.03
23.01
23.04
22.97
22.97
22.05
21.99
21.98
21.88
21.82
22.00
21.91
21.95
21.88
21.88
21.88
21.91
21.93
21.87
21.88
22.03
21.88
21.95
21.98
21.84
21.91
21.07
20.91
21.10
20.96
20.88
20.89
21.18
20.83
20.92
20.92
20.76
20.98
21.03
20.87
20.92
21.00
20.90
20.96
21.03
20.98
20.94
20.08
20.02
20.02
MPR [dB]
0-1
0-1
0-2
0-2
0-3
e. LTE Band 66
Table 8-17
LTE Band 66 (1745.0MHz) Conducted Powers – 20MHz Bandwidth
Modulation
RB Size
RB Offset
Low Channel
LTE Band 66 (AWS)
20 MHz Bandwidth
Mid Channel
High Channel
132072
(1720.0 MHz)
132322
(1745.0 MHz)
132572
(1770.0 MHz)
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
21.93
22.24
22.25
50
21.94
22.16
22.17
99
21.88
22.14
21.89
50
20.85
21.08
21.06
50
25
20.83
21.06
21.04
50
50
20.82
21.03
20.99
100
20.82
21.05
21.01
20.61
20.83
20.89
50
20.57
20.77
20.81
99
20.55
20.72
20.79
50
19.86
20.12
20.12
50
25
19.89
20.10
20.08
50
50
19.87
20.09
20.05
100
19.86
20.08
20.08
20.00
20.18
20.40
50
20.12
20.15
20.38
99
19.75
20.14
20.28
50
19.33
19.40
19.67
50
25
19.22
19.42
19.45
50
50
19.17
19.37
19.46
100
19.27
19.41
19.50
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Table 8-18
LTE Band 66 (1745.0MHz) Conducted Powers – 15MHz Bandwidth
Modulation
Low Channel
LTE Band 66 (AWS)
15 MHz Bandwidth
Mid Channel
RB Size
RB Offset
132047
(1717.5 MHz)
132322
(1745.0 MHz)
22.16
22.29
22.44
36
21.96
22.19
22.45
High Channel
132597
(1772.5 MHz)
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
74
21.90
22.17
21.94
36
20.87
21.11
21.11
36
18
20.85
21.09
21.09
36
37
20.84
21.11
21.08
75
20.84
21.08
21.06
20.86
20.75
20.94
36
20.59
20.80
20.86
0-1
0-1
74
20.63
20.75
20.84
36
19.88
20.15
20.17
36
18
19.91
20.13
20.15
36
37
19.89
20.12
20.10
75
19.88
20.11
20.13
20.02
20.45
20.39
36
19.99
20.21
20.39
0-2
0-2
74
19.82
20.22
20.32
36
19.22
19.44
19.59
36
18
19.21
19.54
19.51
36
37
19.17
19.48
19.49
75
19.19
19.43
19.56
0-3
Table 8-19
LTE Band 66 (1745.0MHz) Conducted Powers – 10MHz Bandwidth
Modulation
RB Size
RB Offset
Low Channel
LTE Band 66 (AWS)
10 MHz Bandwidth
Mid Channel
High Channel
132022
(1715.0 MHz)
132322
(1745.0 MHz)
132622
(1775.0 MHz)
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
22.23
22.15
22.38
25
21.95
22.14
22.13
49
21.85
22.12
21.85
25
20.82
21.06
21.02
25
12
20.80
21.04
21.00
25
25
20.79
21.01
20.95
50
20.79
21.03
20.97
20.58
20.81
20.85
25
20.54
20.75
20.77
49
20.52
20.72
20.75
25
19.83
20.10
20.08
25
12
19.86
20.08
20.13
25
25
19.84
20.07
20.01
50
19.83
20.06
20.04
19.95
20.42
20.35
25
20.00
20.40
20.34
49
19.93
20.38
20.29
25
19.23
19.40
19.63
25
12
19.16
19.45
19.56
25
25
19.12
19.43
19.56
50
19.18
19.40
19.55
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Table 8-20
LTE Band 66 (1745.0MHz) Conducted Powers – 5MHz Bandwidth
Modulation
Low Channel
LTE Band 66 (AWS)
5 MHz Bandwidth
Mid Channel
RB Size
RB Offset
131997
(1712.5 MHz)
132322
(1745.0 MHz)
22.31
22.40
22.55
12
21.92
22.12
22.58
High Channel
132647
(1777.5 MHz)
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
24
22.27
22.10
22.51
12
20.83
21.04
21.28
12
20.81
21.02
21.26
12
13
20.80
20.99
21.21
25
20.80
21.01
21.23
20.59
20.79
21.11
12
20.55
20.73
21.03
0-1
0-1
24
20.53
20.68
21.03
12
19.84
20.08
20.34
12
19.87
20.06
20.30
12
13
19.85
20.05
20.27
25
19.84
20.04
20.30
20.19
20.29
20.55
12
20.18
20.35
20.54
0-2
0-2
24
20.17
20.32
20.52
12
19.27
19.41
19.55
12
19.28
19.33
19.59
12
13
19.25
19.35
19.55
25
19.20
19.36
19.53
0-3
Table 8-21
LTE Band 66 (1745.0MHz) Conducted Powers – 3MHz Bandwidth
Modulation
RB Size
RB Offset
Low Channel
LTE Band 66 (AWS)
3 MHz Bandwidth
Mid Channel
High Channel
131987
(1711.5 MHz)
132322
(1745.0 MHz)
132657
(1778.5 MHz)
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
22.16
22.53
22.27
22.00
22.23
22.26
14
21.94
22.21
21.98
20.91
21.15
21.15
20.89
21.13
21.13
20.88
21.10
21.08
15
20.88
21.12
21.10
20.67
20.90
20.98
20.63
20.84
20.90
14
20.61
20.79
20.88
19.92
20.19
20.21
19.95
20.17
20.17
19.93
20.16
20.14
15
19.92
20.15
20.17
20.10
20.39
20.28
20.11
20.28
20.31
14
20.06
20.26
20.27
19.15
19.44
19.58
19.14
19.48
19.56
19.15
19.46
19.55
15
19.18
19.43
19.51
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Table 8-22
LTE Band 66 (1745.0MHz) Conducted Powers – 1.4MHz Bandwidth
Modulation
Low Channel
LTE Band 66 (AWS)
1.4 MHz Bandwidth
Mid Channel
RB Size
RB Offset
131979
(1710.7 MHz)
132322
(1745.0 MHz)
22.14
22.10
22.16
22.00
22.18
22.25
21.93
22.16
21.97
22.11
22.10
22.14
22.12
22.08
22.12
22.10
22.05
22.07
20.87
21.07
21.09
20.66
21.85
21.57
20.62
20.97
21.57
20.60
21.74
21.87
21.09
21.14
21.20
21.03
21.12
21.16
21.01
21.11
21.13
19.91
20.10
20.16
20.35
20.23
20.51
20.30
20.24
20.50
20.30
20.16
20.51
20.14
20.43
20.58
20.15
20.38
20.56
20.11
20.39
20.53
19.08
19.31
19.53
High Channel
132665
(1779.3 MHz)
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
0-1
0-1
0-2
0-2
0-3
f. LTE Band 2
Table 8-23
LTE Band 2 (1880.0MHz) Conducted Powers – 20MHz Bandwidth
Modulation
RB Size
RB Offset
Low Channel
LTE Band 2 (PCS)
20 MHz Bandwidth
Mid Channel
High Channel
18700
(1860.0 MHz)
18900
(1880.0 MHz)
19100
(1900.0 MHz)
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
22.31
22.16
22.23
50
22.33
22.15
22.24
99
21.66
22.17
22.26
50
21.19
20.99
21.09
50
25
21.17
21.02
21.10
50
50
21.21
21.00
21.11
100
21.19
20.98
21.09
20.97
20.70
20.87
50
21.01
20.72
20.90
0-1
0-1
99
20.96
20.69
20.92
50
20.29
20.12
20.21
50
25
20.30
20.08
20.19
50
50
20.27
20.10
20.20
100
20.24
20.05
20.17
20.34
20.08
20.03
50
20.45
20.00
20.15
99
20.21
19.81
19.97
50
19.43
19.07
19.15
50
25
19.32
19.14
19.18
50
50
19.26
19.08
19.14
100
19.30
19.11
19.21
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Table 8-24
LTE Band 2 (1880.0MHz) Conducted Powers – 15MHz Bandwidth
Modulation
Low Channel
LTE Band 2 (PCS)
15 MHz Bandwidth
Mid Channel
RB Size
RB Offset
18675
(1857.5 MHz)
18900
(1880.0 MHz)
22.34
22.21
22.25
36
22.36
22.20
22.26
High Channel
19125
(1902.5 MHz)
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
74
21.98
22.22
22.28
36
21.22
21.04
21.08
36
18
21.20
21.07
21.12
36
37
21.24
21.05
21.13
75
21.22
21.08
21.11
21.00
20.80
20.89
36
21.04
20.77
21.00
0-1
0-1
74
20.84
20.87
20.85
36
20.32
20.17
20.23
36
18
20.33
20.13
20.21
36
37
20.30
20.15
20.22
75
20.27
20.10
20.19
20.22
19.81
20.03
36
20.10
19.98
20.02
0-2
0-2
74
20.06
19.91
19.97
36
19.47
19.12
19.18
36
18
19.38
19.15
19.11
36
37
19.35
19.13
19.10
75
19.30
19.10
19.16
0-3
Table 8-25
LTE Band 2 (1880.0MHz) Conducted Powers – 10MHz Bandwidth
Modulation
RB Size
RB Offset
Low Channel
LTE Band 2 (PCS)
10 MHz Bandwidth
Mid Channel
High Channel
18650
(1855.0 MHz)
18900
(1880.0 MHz)
19150
(1905.0 MHz)
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
22.36
22.13
22.29
25
22.38
22.12
22.30
49
21.75
22.14
22.32
25
21.24
20.96
21.15
25
12
21.22
20.99
21.16
25
25
21.26
20.97
21.17
50
21.24
20.95
21.15
21.02
20.81
20.96
25
21.06
20.69
20.96
49
21.01
20.72
20.98
25
20.34
20.09
20.27
25
12
20.35
20.05
20.25
25
25
20.32
20.07
20.26
50
20.29
20.02
20.23
20.40
19.96
20.12
25
20.22
19.95
20.00
49
20.16
19.87
20.06
25
19.30
19.12
19.19
25
12
19.27
19.06
19.18
25
25
19.25
19.08
19.20
50
19.33
19.07
19.18
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Table 8-26
LTE Band 2 (1880.0MHz) Conducted Powers – 5MHz Bandwidth
Modulation
Low Channel
LTE Band 2 (PCS)
5 MHz Bandwidth
Mid Channel
RB Size
RB Offset
18625
(1852.5 MHz)
18900
(1880.0 MHz)
22.30
22.11
22.25
12
22.36
22.10
22.26
High Channel
19175
(1907.5 MHz)
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
24
21.70
22.12
22.28
12
21.22
20.94
21.16
12
21.20
20.97
21.12
12
13
21.24
20.95
21.13
25
21.22
20.93
21.11
21.00
20.69
20.98
12
21.04
20.70
20.92
0-1
0-1
24
20.99
20.64
20.94
12
20.32
20.07
20.23
12
20.33
20.03
20.21
12
13
20.25
20.05
20.22
25
20.27
20.00
20.19
20.11
19.80
19.88
12
20.14
19.83
19.92
0-2
0-2
24
20.13
19.81
19.91
12
19.33
19.14
19.14
12
19.30
19.08
19.18
12
13
19.26
19.08
19.16
25
19.27
19.09
19.20
0-3
Table 8-27
LTE Band 2 (1880.0MHz) Conducted Powers – 3MHz Bandwidth
Modulation
RB Size
RB Offset
Low Channel
LTE Band 2 (PCS)
3 MHz Bandwidth
Mid Channel
High Channel
18615
(1851.5 MHz)
18900
(1880.0 MHz)
19185
(1908.5 MHz)
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
22.35
22.10
22.29
22.35
22.09
22.30
14
21.71
22.11
22.32
21.24
20.93
21.15
21.22
20.96
21.16
21.21
20.94
21.17
15
21.20
20.92
21.15
21.02
20.64
20.93
21.06
20.66
20.96
14
21.11
20.63
20.98
20.34
20.06
20.27
20.37
20.02
20.25
20.32
20.04
20.26
15
20.30
19.99
20.23
20.10
19.82
19.91
20.09
19.89
19.92
14
20.04
19.86
19.91
19.25
19.05
19.13
19.29
19.02
19.08
19.30
18.99
19.05
15
19.28
19.09
19.11
FCC ID: A3LSMA730F
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Table 8-28
LTE Band 2 (1880.0MHz) Conducted Powers – 1.4MHz Bandwidth
Modulation
Low Channel
LTE Band 2 (PCS)
1.4 MHz Bandwidth
Mid Channel
RB Size
RB Offset
18607
(1850.7 MHz)
18900
(1880.0 MHz)
19193
(1909.3 MHz)
22.25
22.15
22.14
22.31
22.17
22.17
22.31
22.12
22.13
22.27
22.06
22.20
22.25
22.07
22.18
22.24
22.06
22.17
21.25
21.02
21.12
21.07
20.86
21.00
20.84
20.74
20.82
20.89
20.73
20.80
21.31
21.00
21.18
21.27
21.05
21.21
21.24
21.04
21.20
20.35
20.09
20.19
20.26
19.90
20.16
20.23
19.93
20.09
20.28
19.92
20.09
20.45
19.90
20.21
20.28
19.84
20.31
20.24
19.89
20.28
19.27
19.02
19.18
QPSK
16QAM
64QAM
High Channel
MPR Allowed per
3GPP [dB]
MPR [dB]
0-1
0-1
0-2
0-2
0-3
g. LTE Band 41
Table 8-29
LTE Band 41 (2593.0MHz) Conducted Powers – 20MHz Bandwidth
LTE Band 41
20 MHz Bandwidth
Modulation
Low Channel
Low-Mid Channel
Mid Channel
Mid-High Channel
High Channel
40620
(2593.0 MHz)
41055
(2636.5 MHz)
41490
(2680.0 MHz)
RB Size
RB Offset
39750
(2506.0 MHz)
40185
(2549.5 MHz)
23.18
22.89
23.38
23.31
23.07
50
23.21
22.78
23.22
23.03
22.94
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
99
23.17
22.71
23.08
22.86
22.77
50
22.12
21.88
22.29
22.18
22.07
50
25
22.16
21.83
22.23
22.07
22.01
50
50
22.15
21.80
22.15
21.98
21.94
100
22.09
21.84
22.20
22.05
22.02
22.23
21.76
22.19
21.83
21.96
50
22.27
21.53
22.28
21.62
21.84
0-1
0-1
99
22.17
21.42
22.07
21.45
21.63
50
21.01
20.77
21.23
21.11
21.13
50
25
21.06
20.79
21.11
21.04
21.02
50
50
21.10
20.71
21.04
20.89
21.06
100
21.09
20.74
21.18
20.98
21.04
20.57
20.32
20.88
20.73
20.66
50
20.59
20.33
20.64
20.59
20.51
99
20.60
20.19
20.57
20.42
20.24
50
19.75
19.49
19.88
19.94
19.86
50
25
19.80
19.47
19.84
19.89
19.80
50
50
19.83
19.50
19.85
19.85
19.72
100
19.82
19.51
19.90
19.93
19.82
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Table 8-30
LTE Band 41 (2593.0MHz) Conducted Powers – 15MHz Bandwidth
LTE Band 41
15 MHz Bandwidth
Modulation
Low Channel
Low-Mid Channel
Mid Channel
Mid-High Channel
High Channel
RB Size
RB Offset
39750
(2506.0 MHz)
40185
(2549.5 MHz)
40620
(2593.0 MHz)
41055
(2636.5 MHz)
41490
(2680.0 MHz)
23.14
22.86
23.31
23.21
23.00
36
23.15
22.83
23.21
23.08
22.93
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
74
23.13
22.75
23.07
22.95
22.75
36
22.14
21.82
22.23
22.15
22.00
36
18
22.15
21.83
22.18
22.10
21.93
36
37
22.16
21.78
22.13
22.05
21.88
75
22.15
21.79
22.15
22.10
21.93
22.10
21.66
22.22
22.18
22.27
36
22.13
21.61
22.12
22.08
22.13
74
22.15
21.52
21.97
21.90
22.00
36
21.13
20.83
21.18
21.13
20.97
36
18
21.11
20.76
21.14
21.06
20.90
36
37
21.12
20.70
21.08
21.00
20.85
75
21.11
20.71
21.13
21.04
20.91
20.54
20.37
20.68
20.79
20.64
36
20.68
20.43
20.66
20.77
20.52
74
20.72
20.29
20.55
20.59
20.29
36
19.80
19.50
19.91
19.92
19.86
36
18
19.79
19.51
19.89
19.87
19.78
36
37
19.80
19.46
19.85
19.84
19.69
75
19.85
19.51
19.87
19.94
19.84
0-1
0-1
0-2
0-2
0-3
Table 8-31
LTE Band 41 (2593.0MHz) Conducted Powers – 10MHz Bandwidth
LTE Band 41
10 MHz Bandwidth
Modulation
Low Channel
Low-Mid Channel
Mid Channel
Mid-High Channel
High Channel
RB Size
RB Offset
39750
(2506.0 MHz)
40185
(2549.5 MHz)
40620
(2593.0 MHz)
41055
(2636.5 MHz)
41490
(2680.0 MHz)
23.11
22.80
23.23
23.13
23.00
25
23.16
22.81
23.16
23.03
22.93
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
49
23.15
22.73
23.11
22.97
22.83
25
22.16
21.81
22.19
22.14
22.03
25
12
22.15
21.80
22.13
22.06
21.96
25
25
22.14
21.82
22.10
22.03
21.91
50
22.11
21.79
22.13
22.04
21.94
22.10
21.88
22.33
22.20
22.13
25
22.07
21.76
22.21
22.10
21.98
49
22.17
21.77
22.11
22.01
22.00
25
21.13
20.77
21.13
21.03
21.00
25
12
21.06
20.73
21.10
20.97
20.99
25
25
21.09
20.70
21.07
20.93
20.91
50
21.04
20.66
21.13
20.99
20.90
20.71
20.14
20.58
20.61
20.54
25
20.78
20.15
20.53
20.53
20.44
49
20.68
20.18
20.48
20.42
20.34
25
19.76
19.49
19.86
19.89
19.82
25
12
19.79
19.48
19.84
19.87
19.75
25
25
19.80
19.45
19.81
19.82
19.72
50
19.82
19.46
19.85
19.87
19.80
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Table 8-32
LTE Band 41 (2593.0MHz) Conducted Powers – 5MHz Bandwidth
LTE Band 41
5 MHz Bandwidth
Modulation
Low Channel
Low-Mid Channel
Mid Channel
Mid-High Channel
High Channel
RB Size
RB Offset
39750
(2506.0 MHz)
40185
(2549.5 MHz)
40620
(2593.0 MHz)
41055
(2636.5 MHz)
41490
(2680.0 MHz)
23.08
22.90
23.13
23.03
22.91
12
23.11
22.88
23.11
22.97
22.87
MPR Allowed per
3GPP [dB]
MPR [dB]
Conducted Power [dBm]
QPSK
16QAM
64QAM
24
23.10
22.84
23.07
22.93
22.81
12
22.11
21.85
22.18
22.08
22.00
12
22.13
21.83
22.13
22.07
21.94
12
13
22.14
21.82
22.10
22.06
21.93
25
22.15
21.87
22.15
22.05
21.95
21.98
21.83
22.05
21.88
21.92
12
21.95
21.77
22.01
21.86
21.86
24
22.00
21.76
21.97
21.83
21.86
12
21.10
20.76
21.16
21.04
21.00
12
21.07
20.77
21.11
21.00
20.97
12
13
21.11
20.79
21.09
21.04
20.96
25
21.08
20.80
21.10
21.03
21.00
20.47
20.22
20.57
20.66
20.63
12
20.54
20.26
20.58
20.61
20.60
24
20.51
20.15
20.58
20.58
20.55
12
19.78
19.46
19.82
19.87
19.82
12
19.75
19.44
19.83
19.86
19.81
12
13
19.77
19.44
19.81
19.83
19.76
25
19.77
19.47
19.84
19.84
19.80
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VII.
WIFI Conducted Powers
Table 8-33
IEEE 802.11b/g/n (2.4GHz, SISO) Reduced Average RF Power1
2.4GHz Conducted Power [dBm]
IEEE Transmission Mode
Freq [MHz]
Channel
802.11b
802.11g
802.11n
2412
14.91
14.79
14.40
2437
15.26
14.71
15.19
2462
11
15.09
13.08
13.29
Table 8-34
IEEE 802.11a/n/ac (5GHz, 20MHz BW, SISO) Reduced Average RF Power1
5GHz (20MHz) Conducted Power [dBm]
IEEE Transmission Mode
Freq [MHz]
Channel
802.11a
802.11n
802.11ac
5180
36
12.84
12.77
12.87
5200
40
15.38
13.21
12.67
5220
44
15.01
12.65
12.65
5240
48
15.10
12.82
12.57
5260
52
15.41
13.23
12.78
5280
56
15.33
13.21
13.04
5300
60
14.89
13.14
12.61
5320
64
13.65
13.24
12.78
5500
100
15.47
12.90
12.81
5600
120
14.88
12.48
12.06
5620
124
14.95
12.46
12.07
5720
144
14.96
12.28
12.28
5745
149
14.92
12.47
12.10
5785
157
14.76
11.98
12.25
5825
165
14.89
12.27
12.11
Note: This device utilizes independent power reduction mechanisms for the WIFI transmitter in all WIFI
modes for held-to-ear scenarios.
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Table 8-35
IEEE 802.11n/ac (5GHz, 40MHz BW, SISO) Reduced Average RF Power1
5GHz (40MHz) Conducted Power [dBm]
IEEE Transmission Mode
Freq [MHz]
Channel
802.11n
802.11ac
5190
38
8.28
8.49
5230
46
12.25
13.32
5270
54
12.51
13.49
5310
62
6.54
6.91
5510
102
11.73
11.75
5590
118
13.18
13.33
5630
126
13.37
13.40
5710
142
12.25
12.26
5755
151
11.76
13.37
5795
159
13.33
13.15
Table 8-36
IEEE 802.11ac (5GHz, 80MHz BW, SISO) Reduced Average RF Power1
5GHz (80MHz) Conducted Power [dBm]
IE E E
T ra ns m is s io n
M o de
Freq [MHz]
Channel
5210
42
7.26
5290
58
4.81
5530
106
6.97
802.11ac
5610
122
13.13
5690
138
13.14
5775
155
12.98
Note: This device utilizes independent power reduction mechanisms for the WIFI transmitter in all WIFI
modes for held-to-ear scenarios.
FCC ID: A3LSMA730F
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9.
JUSTIFICATION OF HELD TO EAR MODES TESTED
I. Analysis of RF Air Interface Technologies
a. According to the April 2013 TCB workshop slides, OTT data services are outside the current
definition of a managed CMRS service and are currently not required to be evaluated.
b. An analysis was performed, following the guidance of §4.3 and §4.4 of the ANSI standard, of the
RF air interface technologies being evaluated. The factors that will affect the RF interference
potential were evaluated, and the worst case operating modes were identified and used in the
evaluation. A WD’s interference potential is a function both of the WD’s average near-field field
strength and of the signal’s audio-frequency amplitude modulation characteristics. Per §4.4, RF
air interface technologies that have low power have been found to produce sufficiently low RF
interference potential, so it is possible to exempt them from the product testing specified in
Clause 5 of the ANSI standard. An RF air interface technology of a device is exempt from testing
when its average antenna input power plus its MIF is ≤17dBm for all of its operating modes. RF
air interface technologies exempted from testing in this manner are automatically assigned an M4
rating to be used in determining the overall rating for the WD.
The worst case MIF plus the worst case average antenna input power for all modes are
investigated below to determine the testing requirements for this device.
II. Individual Mode Evaluations
Table 9-1
Max Power + MIF calculations for Low Power Exemptions
Air Interface
Maximum
Average Power
(dBm)
Worst Case
MIF
(dB)
Total
(Power +
MIF, dB)
C63.19
Testing
Required
GSM850
23.78*
3.52
27.30
Yes
GSM1900
20.96*
3.53
24.49
Yes
UMTS - RMC
24.65
-18.57
6.08
No
UMTS - AMR
24.64
-19.20
5.44
No
LTE - FDD
24.58
-9.88
14.70
No
LTE - TDD
16.69*
1.49
18.18
Yes
2.4GHz WIFI
15.26
-9.46
5.80
No
5GHz WIFI
15.47
-1.71
13.76
No
* Note: ANSI C63.19-2011 Sec. 4.4 Footnote 20 indicates the use of a long averaging time for measuring
the antenna input power when using this method of exclusion. Therefore, the frame averaged power was
calculated for these modes in this investigation.
III. Low-Power Exemption Conclusions
Per ANSI C63.19-2011, RF Emissions testing for this device is required only for GSM and LTE-TDD voice
modes. All other air interfaces are exempt.
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10.
LTE TDD UPLINK-DOWNLINK CONFIGURATION
I. Uplink-Downlink Configuration Investigation
An investigation was performed on each supported power class for LTE TDD to determine the worstcase Uplink-Downlink configuration for RFE testing.
Per 3GPP TS 36.211, the total frame length for each TDD radio frame of length Tf = 307200 · Ts = 10
ms, where Ts is a number of time units equal to 1/(15000 x 2048) seconds. Additionally, each radio
frame consists of 10 subframes, each of length 30720 · Ts = 1 ms, and subframes can be designated
as uplink (U), downlink (D), or special subframe (S), depending on the Uplink-Downlink configuration
as indicated in Table 4.2-2 of 3GPP TS 36.211. In the transmission duty factor calculation, the special
subframe configuration with the shortest UpPTS duration within the special subframe is used and will
be applied for measurement. From 3GPP TS 36.211 Table 4.2-1, the shortest UpPTS is 2192 · Ts
which occurs in the normal cyclic prefix and special subframe configuration 4.
See table below outlining the calculated transmission duty cycles for each Uplink-Downlink
configuration:
Table 10-1
Uplink-Downlink Configurations for Type 2 Frame Structures
Uplink‐downlink
configuration
Downlink‐to‐Uplink
Switch‐point periodicity
5 ms
5 ms
5 ms
10 ms
10 ms
10 ms
5 ms
Subframe number
Calculated
Transmission
Duty Cycle (%)
61.4%
41.4%
21.4%
30.7%
20.7%
10.7%
51.4%
II. Uplink-Downlink Configuration Investigation
LTE TDD was evaluated with the following radio configuration: channel 40620, 20MHz BW, 16QAM,
1RB, 0RB Offset. All configurations (0-6) are supported. The configuration which resulted in the worst
AIL was used for full testing. See Table 10-2 below for investigation results. The configuration
determined in the investigation below was used to measure the MIF values in Table 7-4.
Table 10-2
LTE TDD UL-DL Configuration Investigation Results
Mode / Band
Bandwidth
Channel
UL-DL
Config.
Mod.
RB Size
RB
Offset
Scan Center
Time Avg.
Field
(V/m)
Time Avg.
Field
[dB(V/m)]
MIF
(dB)
Audio
Interference
Level
[dB(V/m)]
FCC Limit
(dBV/m)
FCC Margin
(dB)
Result
Excl Blocks
per 5.5
E-Field Emissions
LTE TDD /
Band 41
20
40620
16QAM
Acoustic
13.06
22.32
-3.17
19.15
35.00
-15.85
M4
none
20
40620
16QAM
Acoustic
10.54
20.46
-1.52
18.94
35.00
-16.06
M4
none
20
40620
16QAM
Acoustic
8.09
18.16
1.47
19.63
35.00
-15.37
M4
none
20
40620
16QAM
Acoustic
8.96
19.05
-1.29
17.76
35.00
-17.24
M4
none
20
40620
16QAM
Acoustic
7.28
17.24
0.79
18.03
35.00
-16.97
M4
none
20
40620
16QAM
Acoustic
5.82
15.30
3.61
18.91
35.00
-16.09
M4
none
20
40620
16QAM
Acoustic
11.67
21.34
-2.44
18.90
35.00
-16.10
M4
none
III. Conclusion
Per the investigations above, UL-DL Configuration 2 was used for LTE TDD.
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11.
OVERALL MEASUREMENT SUMMARY
A3LSMA730F
29495
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I. E-FIELD EMISSIONS:
Table 11-1
HAC Data Summary for GSM E-field
Mode
Conducted
Scan Center Power at BS
(dBm)
Channel
Time Avg.
Field
(V/m)
Time Avg.
Field
[dB(V/m)]
MIF
(dB)
Audio
Interference
Level
[dB(V/m)]
FCC Limit
(dBV/m)
FCC Margin
(dB)
Result
Excl Blocks
per 5.5
E-Field Emissions
GSM850
GSM1900
128
Acoustic
32.54
38.49
31.71
3.52
35.23
45.00
-9.77
M4
none
190
Acoustic
32.73
36.71
31.30
3.52
34.82
45.00
-10.18
M4
none
251
Acoustic
32.81
35.00
30.88
3.52
34.40
45.00
-10.60
M4
none
512
Acoustic
29.93
11.48
21.20
3.53
24.73
35.00
-10.27
M4
1,2,3
661
Acoustic
29.84
11.52
21.23
3.53
24.76
35.00
-10.24
M4
1,2,3
810
Acoustic
29.99
11.22
21.00
3.53
24.53
35.00
-10.47
M4
1,2,3
Table 11-2
HAC Data Summary for LTE-TDD E-field
Mode / Band
Time Avg.
Field
(V/m)
Time Avg.
Field
[dB(V/m)]
MIF
(dB)
Audio
Interference
Level
[dB(V/m)]
FCC Limit
(dBV/m)
FCC Margin
(dB)
Result
Excl Blocks
per 5.5
22.23
7.70
17.73
1.43
19.16
35.00
-15.84
M4
none
21.76
7.90
17.95
1.49
19.44
35.00
-15.56
M4
none
Acoustic
22.19
7.43
17.42
1.46
18.88
35.00
-16.12
M4
none
Acoustic
21.83
7.22
17.17
1.41
18.58
35.00
-16.42
M4
none
Acoustic
21.96
7.47
17.46
1.47
18.93
35.00
-16.07
M4
none
Conducted
Scan Center Power at BS
(dBm)
Channel
UL-DL
Config.
Mod.
RB Size
RB
Offset
20
39750
16QAM
Acoustic
20
40185
16QAM
Acoustic
20
40620
16QAM
20
41055
16QAM
20
41490
16QAM
Bandwidth
E-Field Emissions
LTE TDD /
Band 41
Figure 11-1
Sample E-field Scan Overlay
(See Test Setup Photographs for actual WD overlay)
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II. Worst-case Configuration Evaluation
Table 11-3
Peak Reading 360o Probe Rotation at Azimuth axis
Mode
Channel
Scan Center
Time Avg.
Field
(V/m)
Time Avg.
Field
[dB(V/m)]
MIF
(dB)
Audio
Interference
Level
[dB(V/m)]
FCC Limit
(dBV/m)
FCC Margin
(dB)
Result
Excl Blocks
per 5.5
40.03
32.05
3.52
35.57
45.00
-9.43
M4
none
Probe Rotation at Worst-Case
GSM850
128
Acoustic
Figure 11-2
Worst-Case Probe Rotation about Azimuth axis
* Note: Locations of probe rotation (with and without exclusions) are shown in Figure 11-1 denoted by the green square markers.
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12.
EQUIPMENT LIST
Table 12-1
Equipment List
Manufacturer
Model
Description
Cal Date
Cal Interval
Cal Due
Serial Number
Agilent
Agilent
Agilent
Amplifier Research
Anritsu
Anritsu
Anritsu
Anritsu
Anritsu
Mini‐Circuits
Mini‐Circuits
Mini‐Circuits
Pasternack
Rohde & Schwarz
Rohde & Schwarz
Rohde & Schwarz
Seekonk
SPEAG
SPEAG
SPEAG
SPEAG
SPEAG
SPEAG
E4438C
E4432B
N5182A
15S1G6
ML2496A
MA2411B
MA2411B
MA24106A
MA24106A
NLP‐1200+
NLP‐2950+
BW‐N20W5
PE2237‐20
CMU200
CMW500
CMW500
NC‐100
AIA
DAE4
CD2600V3
CD1880V3
CD835V3
ER3DV6
ESG Vector Signal Generator
ESG‐D Series Signal Generator
MXG Vector Signal Generator
Amplifier
Power Meter
Pulse Power Sensor
Pulse Power Sensor
USB Power Sensor
USB Power Sensor
Low Pass Filter DC to 1000 MHz
Low Pass Filter DC to 2700 MHz
Power Attenuator
Bidirectional Coupler
Base Station Simulator
Wideband Radio Communication Tester
Radio Communication Tester
Torque Wrench (8" lb)
Audio Interference Analzyer
Dasy Data Acquisition Electronics
Freespace 2600 MHz Dipole
Freespace 1880 MHz Dipole
Freespace 835 MHz Dipole
Freespace E‐field Probe
3/24/2017
3/24/2017
2/28/2017
N/A
4/20/2017
2/10/2017
2/10/2017
6/7/2017
6/7/2017
N/A
N/A
N/A
N/A
4/11/2017
2/10/2017
3/29/2017
9/1/2016
N/A
5/17/2017
6/14/2017
5/12/2016
5/10/2016
1/16/2017
Biennial
Annual
Annual
CBT*
Annual
Annual
Annual
Annual
Annual
CBT*
CBT*
CBT*
CBT*
Annual
Annual
Annual
Biennial
CBT*
Annual
Biennial
Biennial
Biennial
Annual
3/24/2019
3/24/2018
2/28/2018
N/A
4/20/2018
2/10/2018
2/10/2018
6/7/2018
6/7/2018
N/A
N/A
N/A
N/A
4/11/2018
2/10/2018
3/29/2018
9/1/2018
N/A
5/17/2018
6/14/2019
5/12/2018
5/10/2018
1/16/2018
MY42082385
US40053896
MY47420800
433978
1306009
1207364
1339018
1244512
1248508
N/A
N/A
1226
N/A
836371/0079
162125
128633
21053
1010
859
1013
1064
1082
2353
Calibration traceable to the National Institute of Standards and Technology (NIST).
*Note: CBT (Calibrated Before Testing). Prior to testing, the measurement paths containing a cable, attenuator, coupler or filter
were connected to a calibrated source (i.e. a signal generator) to determine the losses of the measurement path. The power meter
offset was then adjusted to compensate for the measurement system losses. This level offset is stored within the power meter
before measurements are made. This calibration verification procedure applies to the system verification and output power
measurements. The calibrated reading is then taken directly from the power meter after compensation of the losses for all final
power measurements.
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13.
MEASUREMENT UNCERTAINTY
Table 13-1
Uncertainty Estimation Table
Notes:
1.
Test equipments are calibrated according to techniques outlined in NIS81, NIS3003 and NIST Tech Note 1297. All
equipments have traceability according to NIST. Measurement Uncertainties are defined in further detail in NIS 81
and NIST Tech Note 1297 and UKAS M3003.
2.
* Uncertainty specifications from Schmidt & Partner Engineering AG (not site specific)
Measurement uncertainty reflects the quality and accuracy of a measured result as compared to the true value. Such
statements are generally required when stating results of measurements so that it is clear to the intended audience
that the results may differ when reproduced by different facilities. Measurement results vary due to the measurement
uncertainty of the instrumentation, measurement technique, and test engineer. Most uncertainties are calculated
using the tolerances of the instrumentation used in the measurement, the measurement setup variability, and the
technique used in performing the test. While not generally included, the variability of the equipment under test also
figures into the overall measurement uncertainty. Another component of the overall uncertainty is based on the
variability of repeated measurements (so-called Type A uncertainty). This may mean that the Hearing Aid immunity
tests may have to be repeated by taking down the test setup and resetting it up so that there are a statistically
significant number of repeat measurements to identify the measurement uncertainty. By combining the repeat
measurement results with that of the instrumentation chain using the technique contained in NIS 81 and NIS 3003,
the overall measurement uncertainty was estimated.
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14.
TEST DATA
See following Attached Pages for Test Data.
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15.
CALIBRATION CERTIFICATES
The following pages include the probe calibration used to evaluate HAC for the DUT.
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16.
CONCLUSION
The measurements indicate that the wireless communications device complies with the HAC limits
specified in accordance with the ANSI C63.19 Standard and FCC WT Docket No. 01-309 RM-8658.
Precise laboratory measures were taken to assure repeatability of the tests. The tested device complies
with the requirements in respect to all parameters specific to the test. The test results and statements
relate only to the item(s) tested.
Please note that the M-rating for this equipment only represents the field interference possible against a
hypothetical and typical hearing aid. The measurement system and techniques presented in this
evaluation are proposed in the ANSI standard as a means of best approximating wireless device
compatibility with a hearing-aid. The literature is under continual re-construction.
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17.
REFERENCES
1. ANSI/IEEE C63.19-2011, “American National Standard for Methods of Measurement of
Compatibility between Wireless Communication Devices and Hearing Aids.”, New York, NY,
IEEE, May 2011
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13, 2017
3. FCC Public Notice DA 06-1215, Wireless Telecommunications Bureau and Office of Engineering
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6, 2006
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14. EHIMA GSM Project, Development phase, Part II Project Report. Technical-Audiological
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15. EHIMA GSM Project Final Report, Hearing Aids and GSM Mobile Telephones: Interference
Problems, Methods of Measurement and Levels of Immunity. Technical-Audiological Laboratory
and Telecom Denmark, 1995.
16. HAMPIS Report, Comparison of Mobile phone electromagnetic near field with an upscaled
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18. IEEE 100, The Authoritative Dictionary of IEEE Standards Terms, Seventh Edition.
19. Joyner, K. H, et. al., Interference to Hearing Aids by the New Digital Mobile Telephone System,
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Australian Hearing Series, Sydney 1993.
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System for Mobile Communications (GSM), NAL Report #131, National Acoustic Laboratory,
Australian Hearing Series, Sydney, 1995.
21. Konigstein, D., and Hansen, D., “A New Family of TEM Cells with enlarged bandwidth and
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Department of Commerce, National Bureau of Standards, Technical Note 1099, July 1986, pp.
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Susceptibility Levels of Electrically Small Objects Using a TEM Cell,” U.S. Department of
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25. McCandless, G. A., and Lyregaard, P. E., Prescription of Gain/Output (POGO) for Hearing Aids,
Hearing Instruments 1:16-21, 1983
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Transactions on Rehabilitation Engineering, vol. 6, no. 2, pp. 235-239, June 1998.
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Standards Institute, January 1993.
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Update,” Hearing Journal 1998; 51:10, pp. 53-60
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Calibration and Measurements, AIP Press.
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Download: SMA730F Multi-band GSM/EDGE/UMTS/LTE Phone with Bluetooth, WLAN, RFID and ANT+ Test Report HAC RFE Samsung Electronics Co Ltd
Mirror Download [FCC.gov]SMA730F Multi-band GSM/EDGE/UMTS/LTE Phone with Bluetooth, WLAN, RFID and ANT+ Test Report HAC RFE Samsung Electronics Co Ltd
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